2
RF Device Data
Freescale Semiconductor
MRF1518NT1
Table 4. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS
= 40 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 10 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 12.5 Vdc, I
D
= 100
μA)
VGS(th)
1
1.6
2.1
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 1 Adc)
VDS(on)
?
0.4
?
Vdc
Dynamic Characteristics
Input Capacitance
(VDS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Ciss
?
66
?
pF
Output Capacitance
(VDS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Coss
?
33
?
pF
Reverse Transfer Capacitance
(VDS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Crss
?
4.5
?
pF
Functional Tests
(In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD
= 12.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
Gps
?
13
?
dB
Drain Efficiency
(VDD
= 12.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
η
?
60
?
%
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